tsc5302d high voltage npn transistor with diode 1/6 version: f10 to - 251 (ipak) to - 252 (dpak) features build-in free-wheeling diode makes efficient anti- saturation operation no need to interest an hfe value because of low va riable storage-time spread even though comer spirit product. low base drive requirement suitable for half bridge light ballast application structure silicon triple diffused type npn silicon transistor with diode ordering information part no. package packing tsc5302dcp ro to-252 2.5kpcs / 13 reel tsc5302dcp rog to-252 2.5kpcs / 13 reel tsc5302dch c5 to-251 75pcs / tube tsc5302dch c5g to-251 75pcs / tube note: g denote for halogen free product absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 10 v collector current i c 2 a collector peak current (tp <5ms) i cm 4 a base current i b 1 a base peak current (tp <5ms) i bm 2 a total dissipation @ tc 25 o c to-251 p tot 1.5 w to-252 25 maximum operating junction temperature t j +150 o c storage temperature range t stg -65 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 6.25 o c/w junction to ambient thermal resistance r ? ja 100 o c/w block diagram pin definition : 1. base 2. collector 3. emitter product summary bv ceo 400v bv cbo 700v i c 2a v ce(sat) 1.1v @ i c / i b = 1a / 0.25a
tsc5302d high voltage npn transistor with diode 2/6 version: f10 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-base voltage i c = 1ma, i b = 0 bv cbo 700 -- -- v collector-emitter breakdown voltage a i c = 10ma, i e = 0 bv ceo 400 -- -- v emitter-base breakdown voltage i e = 1ma, i c = 0 bv ebo 10 -- -- v collector cutoff current v cb = 700v, i e = 0 i cbo -- -- 1 ua emitter cutoff current v eb = 9v, i c = 0 i ebo -- -- 1 ua collector-emitter saturation voltage a i c =0.5a, i b =0.1a v ce(sat)1 -- -- 0.5 v i c =1a, i b =0.25a v ce(sat)2 -- 1.1 1.5 base-emitter saturation voltage a i c =0.5a, i b =0.1a v be(sat)1 -- -- 1.1 v i c =1a, i b =0.25a v be(sat)2 -- -- 1.2 dc current gain v ce =5v, i c =10ma h fe 1 10 -- -- v ce =5v, i c =400ma h fe 2 10 -- 30 v ce =5v, i c =1a h fe 3 5 -- -- turn on time v cc =250v, i c =1a, i b1 =i b2 =0.2a, t p =25us duty cycle<1% t on -- 0.15 0.3 us storage time t stg -- 0.5 0.9 us fall time t f -- 0.2 0.4 us diode fall time i c =1a t f -- -- 800 us forward voltage drop i c =1a vf -- -- 1.4 v notes: a. pulsed duration = 300us, duty cycle 2%
tsc5302d high voltage npn transistor with diode 3/6 version: f10 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. static characteristics figure 2. dc current gain figure 3. vce(sat) v.s. vbe(sat) figure 4. power derating figure 5. reverse bias soa figure 6. safety operating area
tsc5302d high voltage npn transistor with diode 4/6 version: f10 to-252 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-252 dimension dim millimeters inches min max min max a 2.290 bsc 0.090 bsc a1 4.600 bsc 0.180 bsc b 7.000 7.200 0.275 0.283 c 6.000 6.200 0.236 0.244 d 6.400 6.604 0.252 0.260 e 2.210 2.387 0.087 0.094 f 0.010 0.127 0.000 0.005 g 5.232 5.436 0.206 0.214 g1 0.666 0.889 0.026 0.035 g2 0.633 0.889 0.025 0.035 h 0.508 ref 0.020 ref i 0.900 1.500 0.035 0.059 j 2.743 ref 0.108 ref k 0.660 0.940 0.026 0.037 l 1.397 1.651 0.055 0.065 m 1.100 ref 0.043 ref
tsc5302d high voltage npn transistor with diode 5/6 version: f10 to-251 mechanical drawing marking diagram y = year code m = month co de ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-251 dimension dim millimeters inches min max min max a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.10 0.235 0.240 e 6.35 6.73 0.250 0.265 e 2.28 bsc. 0.90 bsc. l 8.89 9.65 0.350 0.380 l1 1.91 2.28 0.075 0.090 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.045 0.060
tsc5302d high voltage npn transistor with diode 6/6 version: f10 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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